NTMFS4C250N دیتاشیت

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مشاهده دیتاشیت NTMFS4C250N	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMFS4C250NT1G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 30.5W
Total Gate Charge (Qg@Vgs): 11.6nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 1.683nF@15V
Continuous Drain Current (Id): 69A
Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds): 40pF@15V
Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2mΩ@10V,30A
Package: SO-8-FL-5.8mm
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
FET Feature: -
Power Dissipation (Max): 770mW (Ta)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN
Base Part Number: NTMFS4
detail: N-Channel 30V 11A (Ta), 69A (Tc) 770mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)